Role of FD-SOI in Powering AI-Driven IoT Applications

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The novel semiconductor technology is emerging as a key enabler for AI-driven IoT applications

aibusiness.com, Nov. 25, 2024 – 

The convergence of artificial intelligence (AI) and the Internet of Things (IoT) is revolutionizing the technology landscape. Fully depleted silicon on insulator (FD-SOI) technology, a semiconductor fabrication process, is emerging as a key enabler for AI-driven IoT applications due to its unique power efficiency, performance, thermal management and reliability advantages.

Reducing Power Consumption and Enabling Faster Data Processing

One of the most significant benefits of FD-SOI technology is its ability to substantially reduce power consumption. This is achieved through a thin insulating layer that minimizes leakage currents, making FD-SOI particularly suitable for IoT devices that often rely on battery power or energy harvesting. The reduced leakage current is crucial for extending the battery life of mobile and wearable IoT devices, ensuring they can operate for extended periods without frequent recharging.

Additionally, FD-SOI supports dynamic voltage and frequency scaling (DVFS), which allows AI IoT devices to dynamically adjust their power usage based on the workload. This capability ensures that devices can operate efficiently under varying conditions, conserving energy during low-demand periods and ramping up performance when needed. FD-SOI technology excels in supporting ultra-low power modes, making it ideal for IoT applications that require long periods of standby operation with occasional active periods. Examples include remote sensors and wearable devices, which need to be energy-efficient to function effectively over long durations.

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