Europe invests 830 million euros to build FAMES FD-SOI pilot line to achieve 7nm with planar CMOS

Find the Latest SoC Solutions
for... Automotive... IoT... Security... Audio... Video

passionategeekz.com, Jun. 25, 2024 – 

On June 25, the French CEA-Leti Institute officially announced that it would take the lead in building the FD-SOI pilot line code-named FAMES. The total investment in the project is 830 million euros (Passionategeekz Note: currently about 6.474 billion yuan).

CEA-Leti is a subsidiary of the French Atomic Energy and Alternative Energies Commission.The inventor of FD-SOI (fully depleted silicon on insulator)。

FD-SOI is a planar COMS technology that uses a different technical route from the popular FinFET three-dimensional transistors in the advanced process field:

The FD-SOI process buries an ultra-thin oxide insulator on top of the base silicon, reducing the parasitic capacitance between the source and drain and effectively limiting the flow of electrons from source to drain, significantly reducing the impact Leakage current effects on performance.

FAMES is one of four advanced semiconductor pilot line projects designated by the European chip consortium Chip JU. Other projects include the one led by Belgium's imec. NanoIC sub-2nm process SoC pilot line, etc.。

Click here to read more...

 Back